DETERMINATION OF THERMAL-EXPANSION OF PURE GE AND A MEASUREMENT OF DIFFERENTIAL THERMAL-EXPANSION OF A GE-GAAS THIN-LAYER COUPLE

被引:13
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FEDER, R
LIGHT, TB
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10.1063/1.1661668
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O59 [应用物理学];
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页码:3114 / &
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共 7 条
[1]   EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J].
BERKENBL.M ;
REISMAN, A ;
LIGHT, TB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :966-&
[2]   PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J].
FEDER, R ;
LIGHT, T .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4870-&
[3]   EQUILIBRIUM DEFECT CONCENTRATION IN CRYSTALLINE SODIUM [J].
FEDER, R ;
CHARBNAU, HP .
PHYSICAL REVIEW, 1966, 149 (02) :464-&
[4]  
Kirby R.K., 1963, AM I PHYSICS HDB, P4
[5]   PLASTIC DEFORMATION IN EPITAXIAL GE LAYERS GROWN ON SINGLE CRYSTAL SEMI-INSULATING GAAS [J].
LIGHT, TB ;
BERKENBL.M ;
REISMAN, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :969-&
[6]  
LIGHT TB, 1971, SPR EL SOC M WASH, P272
[7]  
NOVIKOVA SI, 1961, SOV PHYS-SOL STATE, V3, P129