A SCANNING-ELECTRON-INDUCED OR LIGHT-BEAM-INDUCED CURRENT METHOD FOR DETERMINATION OF GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SEMICONDUCTORS

被引：12

作者：

DIMITRIADIS, CA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1761 / 1765

页数：5

相关论文

共 20 条

[1] ABRAMOWITZ A, 1965, HDB MATH FUNCTIONS
[2] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE
BERZ, F
KUIKEN, HK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 437 - 445
[3] DETERMINATION OF SURFACE RECOMBINATION VELOCITY AT A GRAIN-BOUNDARY USING ELECTRON-BEAM-INDUCED CURRENT
BURK, DE
KANNER, S
MUYSHONDT, JE
SHAULIS, DS
RUSSELL, PE
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 169 - 173
[4] BURK DE, 1982, IEEE T ELECTRON DEVI, V19, P1887
[5] EFFECT OF GRAIN-BOUNDARIES IN SILICON ON MINORITY-CARRIER DIFFUSION LENGTH AND SOLAR-CELL EFFICIENCY
DAUD, T
KOLIWAD, KM
ALLEN, FG
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1009 - 1011
[6] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS
DONOLATO, C
KLANN, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1624 - 1633
[7] THEORY OF BEAM INDUCED CURRENT CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SOLAR-CELLS
DONOLATO, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1314 - 1322
[8] DONOLATO C, 1980, JAPAN J APPL PHYS, V19, P1771
[9] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS
EVERHART, TE
HOFF, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &
[10] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS
HACKETT, WH
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1649 - &