MICROCRYSTALLINE FORMATION IN SPUTTERED A-SI-H-FILMS

被引：9

作者：

SHIRAFUJI, J ^{[1
]}

MATSUI, H ^{[1
]}

NARUKAWA, A ^{[1
]}

INUISHI, Y ^{[1
]}

TANAKA, N ^{[1
]}

机构：

[1] OSAKA UNIV,INST PROT RES,SUITA,OSAKA 565,JAPAN

来源：

关键词：

D O I：

10.1016/0038-1098(83)90430-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：577 / 580

页数：4

共 10 条

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[8] SPEAR WE, 1981, 9TH P INT C AM LIQ S, P257
[9] PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03): : 295 - 308
[10] 1981, 9TH P INT C AM LIQ S