ION-IMPLANTATION OF POROUS SILICON

被引：22

作者：

PENG, C

FAUCHET, PM

REHM, JM

MCLENDON, GL

SEIFERTH, F

KURINEC, SK

机构：

[1] UNIV ROCHESTER,DEPT CHEM,ROCHESTER,NY 14627

[2] ROCHESTER INST TECHNOL,DEPT MICROELECTR ENGN,ROCHESTER,NY 14623

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.110858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the properties of light-emitting porous silicon after ion implantation and successive annealing through continuous-wave photoluminescence (CWPL) and time dependent photoluminescence (TDPL) spectroscopies. Implantation was performed with phosphorus, boron and silicon ions of different doses and energies. Low dose dopant implantation keeps or even increases the CWPL intensity and increases the TDPL decay time. High dose dopant implantation and silicon self-implantation reduce the CWPL intensity and slightly decrease the TDPL decay time.

引用

页码：1259 / 1261

页数：3

共 14 条

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[12]

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MULLER, F ;

ROMESTAIN, R ;

MACFARLANE, RM .

PHYSICAL REVIEW B, 1992, 45 (24) :14171-14176

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