CHARACTERIZATION OF THE BULK DEFECTS IN INP CRYSTAL WITH A HIGH-RESOLUTION TRIPLE-CRYSTAL X-RAY DIFFRACTOMETER

Intensity distributions for various reflections from InP single crystal were measured with a triple-crystal X-ray diffractometer. The measured intensity patterns were compared with those calculated for a perfect crystal. This comparison showed a good agreement for the Bragg-case diffraction, while a broadening of the measured intensity profiles was observed for the Laue-case diffraction. This broadening results from the presence of microdefects in the bulk of the material. The critical radius of the microfects was estimated to be in the range of 1 to 2-mu-m from the power law of scattering for the Laue reflection curves. The microdefects were found to be of interstitial type and the computer simulations suggest that they are formed by aggregation of dislocation loops consistent with {111}[110] model.