OPTIMIZATION OF ANODIC SILICON-OXIDE FILMS FOR LOW-TEMPERATURE PASSIVATION OF SILICON SURFACES

被引：19

作者：

MENDE, G ^{[1
]}

FLIETNER, H ^{[1
]}

DEUTSCHER, M ^{[1
]}

机构：

[1] ZENT INST KERNFORSCH ROSSENDORF,O-8051 DRESDEN,GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 01期

关键词：

D O I：

10.1149/1.2056083

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electrochemical and electrophysical methods are used for optimizing anodic oxide films as passivating layers or electronic devices. Under certain conditions the electrophysical properties of thermally and anodically grown SiO2 films are practically identical. For several years such anodic oxide films have been applied for passivation of electron detectors with very-high-resistivity starting material (10-30 kOMEGA-cm), which forms a part of the Zeiss Jena electron-beam inspection system ZRM20 for the measurement of material and topography contrast in electron beam lithography.

引用

页码：188 / 194

页数：7

共 35 条

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