IN-SITU CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY STUDY OF INDIUM SEGREGATION AT GAINAS/GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

LARIVE, M

NAGLE, J

LANDESMAN, JP

MARCADET, X

MOTTET, C

BOIS, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ ultraviolet photoelectron spectroscopy (UPS) measurements have been performed at GaInAs/GaAs (100) interfaces. The high depth resolution of the UPS technique applied to the specific case of GaInAs/GaAs heterostructures [core-level photoelectron escape depth lambda almost-equal-to 2.1 monolayers (MLs)] is shown, yielding quantitative informations on the Ga/In atomic profiles at the ML scale. A surface segregation model is developped and the phenomenological segregation energy is obtained by UPS. This energy is used to generate potential energy profiles in a calculation of the energy of photoluminescence (PL) lines in GaInAs/GaAs quantum wells; the quantitative agreement with measured PL lines is very good.

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页码：1413 / 1417

页数：5

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