QUANTITATIVE-ANALYSIS OF SYNCHROTRON RADIATION PHOTOEMISSION CORE LEVEL DATA

被引：154

作者：

JOYCE, JJ

DELGIUDICE, M

WEAVER, JH

机构：

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1989年 / 49卷 / 01期

关键词：

D O I：

10.1016/0368-2048(89)80035-0

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：31 / 45

页数：15

共 22 条

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[2] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
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[4] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - ROOM-TEMPERATURE REACTION AND SCHOTTKY-BARRIER FORMATION
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[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6213 - 6221
[5] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
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[6] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[7] HARRISON WA, 1979, SOLID STATE THEORY
[8] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES
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[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (13) : 1112 - 1115
[9] SYSTEMATICS OF ELECTRONIC-STRUCTURE AND LOCAL BONDING FOR METAL/GAAS(110) INTERFACES
JOYCE, JJ
GRIONI, M
DELGIUDICE, M
RUCKMAN, MW
BOSCHERINI, F
WEAVER, JH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2019 - 2023
[10] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY
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GRANT, RW
WALDROP, JR
KOWALCZYK, SP
[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1965 - 1977

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