SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - ROOM-TEMPERATURE REACTION AND SCHOTTKY-BARRIER FORMATION

被引：55

作者：

DELGIUDICE, M

JOYCE, JJ

RUCKMAN, MW

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6213 / 6221

页数：9

共 50 条

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ABOELFOTOH, MO ;

TU, KN .

PHYSICAL REVIEW B, 1986, 33 (10) :6572-6578

[2] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100) [J].

ABOELFOTOH, MO ;

TU, KN .

PHYSICAL REVIEW B, 1986, 34 (04) :2311-2318

[3] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[4] HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION [J].

BOSCHERINI, F ;

JOYCE, JJ ;

RUCKMAN, MW ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (09) :4216-4220

[5] CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].

BRENNAN, S ;

STOHR, J ;

JAEGER, R ;

ROWE, JE .

PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418

[6] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[7] PHOTOEMISSION-STUDIES OF ATOMIC REDISTRIBUTION AT GOLD-SILICON AND ALUMINUM-SILICON INTERFACES [J].

BRILLSON, LJ ;

KATNANI, AD ;

KELLY, M ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :551-555

[8] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS [J].

BUTERA, RA ;

DELGIUDICE, M ;

WEAVER, JH .

PHYSICAL REVIEW B, 1986, 33 (08) :5435-5449

[9] CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].

BUTZ, R ;

RUBLOFF, GW ;

TAN, TY ;

HO, PS .

PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429

[10] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES [J].

CHAMBERS, SA ;

HILL, DM ;

XU, F ;

WEAVER, JH .

PHYSICAL REVIEW B, 1987, 35 (02) :634-640

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