HIGH-RESOLUTION PHOTOEMISSION-STUDY OF CO/SI(111) INTERFACE FORMATION

被引：80

作者：

BOSCHERINI, F

JOYCE, JJ

RUCKMAN, MW

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.35.4216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：4216 / 4220

页数：5

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共 28 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
Brillson, L. J.
[J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
[2] QUANTITATIVE MODEL OF REACTIVE METAL-SEMICONDUCTOR INTERFACE GROWTH USING HIGH-RESOLUTION PHOTOEMISSION RESULTS
BUTERA, RA
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5435 - 5449
[3] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS
Calandra, C.
Bisi, O.
Ottaviani, G.
[J]. SURFACE SCIENCE REPORTS, 1985, 4 (5-6) : 271 - 364
[4] CHAINET E, 1986, SURF SCI, V168, P309
[5] HIGH-TEMPERATURE NUCLEATION AND SILICIDE FORMATION AT THE CO/SI(111)-7X7 INTERFACE - A STRUCTURAL INVESTIGATION
CHAMBERS, SA
ANDERSON, SB
CHEN, HW
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1986, 34 (02): : 913 - 920
[6] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE
COMIN, F
ROWE, JE
CITRIN, PH
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (26) : 2402 - 2405
[7] CLUSTER FORMATION AND ATOMIC INTERMIXING AT THE REACTIVE V/GE(111) INTERFACE
DELGIUDICE, M
JOYCE, JJ
RUCKMAN, MW
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1985, 32 (08): : 5149 - 5155
[8] AU-SI INTERFACE FORMATION - THE OTHER SIDE OF THE PROBLEM
FRANCIOSI, A
NILES, DW
MARGARITONDO, G
QUARESIMA, C
CAPOZI, M
PERFETTI, P
[J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6917 - 6919
[9] ELECTRONIC-STRUCTURE OF NICKEL SILICIDES NI2SI, NISI, AND NISI2
FRANCIOSI, A
WEAVER, JH
SCHMIDT, FA
[J]. PHYSICAL REVIEW B, 1982, 26 (02) : 546 - 553
[10] CLUSTER-INDUCED REACTIONS AT A METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111)
GRIONI, M
JOYCE, J
CHAMBERS, SA
ONEILL, DG
DELGIUDICE, M
WEAVER, JH
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (24) : 2331 - 2334