SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - ROOM-TEMPERATURE REACTION AND SCHOTTKY-BARRIER FORMATION

被引：55

作者：

DELGIUDICE, M

JOYCE, JJ

RUCKMAN, MW

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6213 / 6221

页数：9

共 50 条

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