BONDING IN METAL DISILICIDES CASI2 THROUGH NISI2 - EXPERIMENT AND THEORY

被引:150
作者
WEAVER, JH [1 ]
FRANCIOSI, A [1 ]
MORUZZI, VL [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 06期
关键词
D O I
10.1103/PhysRevB.29.3293
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3293 / 3302
页数:10
相关论文
共 36 条
  • [1] SPECTROSCOPIC EVIDENCE OF CHEMICAL INTERACTION IN SI-PT INTERFACES AT LIQUID-NITROGEN TEMPERATURE
    ABBATI, I
    BRAICOVICH, L
    DEMICHELIS, B
    [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (02) : 145 - 147
  • [2] LINEAR METHODS IN BAND THEORY
    ANDERSEN, OK
    [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083
  • [3] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
    BISI, O
    CALANDRA, C
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
  • [4] ELECTRONIC-STRUCTURE OF VANADIUM SILICIDES
    BISI, O
    CHIAO, LW
    [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 4943 - 4948
  • [5] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581
  • [6] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES
    Brillson, L. J.
    [J]. SURFACE SCIENCE REPORTS, 1982, 2 (02) : 123 - 326
  • [7] SELF-CONSISTENT ENERGY-BANDS AND BONDING OF NISI2
    BYLANDER, DM
    KLEINMAN, L
    MEDNICK, K
    GRISE, WR
    [J]. PHYSICAL REVIEW B, 1982, 26 (12): : 6379 - 6383
  • [8] PHOTOEMISSION AND BAND-STRUCTURE RESULTS FOR NISI-2
    CHABAL, YJ
    HAMANN, DR
    ROWE, JE
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7598 - 7602
  • [9] DIFFUSION-LAYER MICROSTRUCTURE OF NI ON SI(100)
    CHANG, YJ
    ERSKINE, JL
    [J]. PHYSICAL REVIEW B, 1982, 26 (08): : 4766 - 4769
  • [10] METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM
    CHEUNG, NW
    GRUNTHANER, FJ
    GRUNTHANER, PJ
    MAYER, JW
    ULLRICH, BM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 917 - 923