DETERMINATION OF THE NATURAL VALENCE-BAND OFFSET IN THE INXGA1-XAS SYSTEM

被引:13
作者
HWANG, J [1 ]
PIANETTA, P [1 ]
SHIH, CK [1 ]
SPICER, WE [1 ]
PAO, YC [1 ]
HARRIS, JS [1 ]
机构
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
关键词
D O I
10.1063/1.98578
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1632 / 1633
页数:2
相关论文
共 6 条
[1]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[2]   DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].
KOWALCZYK, SP ;
SCHAFFER, WJ ;
KRAUT, EA ;
GRANT, RW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :705-708
[3]   EFFECTS OF STRAIN AND LAYER THICKNESS ON THE GROWTH OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES [J].
LAIDIG, WD ;
PENG, CK ;
LIN, YF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :181-185
[4]   DO WE UNDERSTAND HETEROJUNCTION BAND DISCONTINUITIES [J].
MARGARITONDO, G .
SURFACE SCIENCE, 1986, 168 (1-3) :439-453
[5]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[6]   DETERMINATION OF A NATURAL VALENCE-BAND OFFSET - THE CASE OF HGTE AND CDTE [J].
SHIH, CK ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1987, 58 (24) :2594-2597