ON THE SENSITIVITY OF TRANSIENT PHOTODECAY MEASUREMENTS AS A PROBE OF LOCALIZED STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS

被引:30
作者
MARSHALL, JM [1 ]
STREET, RA [1 ]
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
关键词
D O I
10.1016/0038-1098(84)90914-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:91 / 95
页数:5
相关论文
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