EFFECT OF DISLOCATION DENSITY ON EPITAXIAL GROWTH OF SILVER

被引：8

作者：

HYDER, SB

WILKOV, MA

机构：

来源：

关键词：

D O I：

10.1063/1.1709890

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2386 / &

共 9 条

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[3] NUCLEATION ON DISLOCATIONS
CAHN, JW
[J]. ACTA METALLURGICA, 1957, 5 (03): : 169 - 172
[4] INFLUENCE OF ELECTRIC FIELD ON GROWTH OF THIN METAL FILMS
CHOPRA, KL
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2249 - &
[5] FRANCOMBE I, 1963, P INT C PHILCO SC ED, P201
[6] EPITAXIAL GROWTH ON MGO OF NIOBIUM FILMS INVESTIGATED BY ELECTRON MICROSCOPY
HUTCHINSON, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) : 270 - +
[7] HYDER SB, 1963, INDIAN J PURE APPL P, V1, P342
[8] THE STUDY OF EPITAXY IN THIN SURFACE FILMS
PASHLEY, DW
[J]. ADVANCES IN PHYSICS, 1956, 5 (18) : 173 - +
[9] SELLA C, 1963, P INT C PHILCO SCIEN, P201