BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3

被引：580

作者：

HAMBERG, I ^{[1
]}

GRANQVIST, CG ^{[1
]}

BERGGREN, KF ^{[1
]}

SERNELIUS, BE ^{[1
]}

ENGSTROM, L ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,THEORET PHYS GRP,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3240 / 3249

页数：10

共 56 条

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