HIGH-POWER (ALGA)AS STRIP-BURIED HETEROSTRUCTURE LASERS

被引：8

作者：

VANDERZIEL, JP ^{[1
]}

LOGAN, RA ^{[1
]}

DUPUIS, RD ^{[1
]}

机构：

[1] AT&T BELL LABS,MAT SCI RES DEPT,MURRAY HILL,NJ

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 10期

关键词：

D O I：

10.1109/JQE.1985.1072556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1659 / 1665

页数：7

共 22 条

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ACKLEY, DE .

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[2] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].

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[4] CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY [J].

BOTEZ, D .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :190-192

[5] SINGLE-MODE POSITIVE-INDEX GUIDED CW CONSTRICTED DOUBLE-HETEROJUNCTION LARGE-OPTICAL-CAVITY ALGAAS LASERS WITH LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY [J].

BOTEZ, D ;

CONNOLLY, JC .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :658-660

[6] VERY HIGH CW OUTPUT POWER AND POWER CONVERSION EFFICIENCY FROM CURRENT-CONFINED CDH-LOC DIODE-LASERS [J].

BOTEZ, D ;

CONNOLLY, JC ;

ETTENBERG, M ;

GILBERT, DB .

ELECTRONICS LETTERS, 1983, 19 (21) :882-883

[7] TERRACED-HETEROSTRUCTURE LARGE-OPTICAL-CAVITY ALGAAS DIODE-LASER - A NEW TYPE OF HIGH-POWER CW SINGLE-MODE DEVICE [J].

BOTEZ, D ;

CONNOLLY, JC .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :310-312

[8] HIGH-POWER CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS FOR OPTICAL-RECORDING [J].

BOTEZ, D ;

SPONG, FW ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :4-6

[9]

BOTEZ D, COMMUNICATION

[10] NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER [J].

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SCIFRES, DR ;

STREIFER, W ;

PELED, S .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :734-736

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