NOVEL GAAS/ALGAAS MULTIQUANTUM-WELL SCHOTTKY-JUNCTION DEVICE AND ITS PHOTOVOLTAIC LWIR DETECTION

被引:23
作者
WU, CS
WEN, CP
SATO, RN
HU, M
TU, CW
ZHANG, J
FLESNER, LD
PHAM, L
NAYER, PS
机构
[1] HUGHES AIRCRAFT CO,HUGHES MICROELECTR CTR,CARLSBAD,CA 92008
[2] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093
[3] USN,CTR OCEAN SYST,SAN DIEGO,CA 92152
[4] HUGHES AIRCRAFT CO,DIV SPACE & STRATEG ENGN,EL SEGUNDO,CA 90245
关键词
D O I
10.1109/16.121678
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have, for the first time, demonstrated photovoltaic detection for a multiple quantum-well (MQW) long-wavelength infrared (LWIR) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 x 10(-14) A for a 100 x 100-mu-m2 detector (designed for 10-mu-m response) at 40 K, nearly nine orders of magnitude lower than that of a similar MQW LWIR detector without the blocking layer. The ideality factor is approximately 1.01-1.05 at T = 40-80 K. The measured "Schottky"-barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. We also, for the first time, report a measured effective Richardson constant (A**) for a GaAs/AlGaAs heterojunction using this blocking layer structure. The A** is low approximately 2.3 A/cm2/K2.
引用
收藏
页码:234 / 241
页数:8
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