SEMICONDUCTING GLASSES

被引：16

作者：

ADLER, D

机构：

[1] MIT, Cent for Materials Science, & Engineering, Cambridge, MA,, USA, MIT, Cent for Materials Science & Engineering, Cambridge, MA, USA

来源：

关键词：

D O I：

10.1016/0022-3093(85)90347-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：205 / 214

页数：10

共 39 条

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ABELES, B
TIEDJE, T
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (21) : 2003 - 2006
[2] NORMAL STRUCTURAL BONDING AND DEFECTS IN COVALENT AMORPHOUS SOLIDS
ADLER, D
[J]. JOURNAL OF SOLID STATE CHEMISTRY, 1982, 45 (01) : 40 - 50
[3] THRESHOLD SWITCHING IN CHALCOGENIDE-GLASS THIN-FILMS
ADLER, D
SHUR, MS
SILVER, M
OVSHINSKY, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3289 - 3309
[4] ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291
[5] LOCALIZED ELECTRONIC STATES IN AMORPHOUS-SEMICONDUCTORS
ADLER, D
YOFFA, EJ
[J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1977, 55 (11): : 1920 - 1929
[6] DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
ADLER, D
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 3 - 14
[7] THEORY OF AMORPHOUS-SEMICONDUCTORS
ADLER, D
[J]. SOLAR CELLS, 1980, 2 (03): : 199 - 226
[8] MECHANISM OF THRESHOLD SWITCHING IN AMORPHOUS ALLOYS
ADLER, D
HENISCH, HK
MOTT, N
[J]. REVIEWS OF MODERN PHYSICS, 1978, 50 (02) : 209 - 220
[9] EFFECTIVE CORRELATION-ENERGY OF THE DANGLING BOND IN AMORPHOUS-SILICON
ADLER, D
SHAPIRO, FR
[J]. PHYSICA B & C, 1983, 117 (MAR): : 932 - 934
[10] ADLER D, 1980, DECADES AHEAD MIT PE, P399