2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA(0.47)IN(0.5)3AS HETEROSTRUCTURES

被引：30

作者：

LO, I

MITCHEL, WC

AHOUJJA, M

CHENG, JP

FATHIMULLA, A

MIER, H

机构：

[1] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.114083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed the population of the second two-dimensional electron subband in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Shubnikov-de Haas measurements. After illuminating the samples at low temperature, the electron density increases from 17.3 to 18.2×1011 cm-2 for the first subband and from 3.6 to 4.1×1011 cm-2 for the second subband. The population of the second subband begins when the first subband is filled at a density of 10.3×1011 cm-2. The effective mass of the second subband is equal to (0.045±0.003)m0, indicating significant band nonparabolicity in the Ga0.47In0.53As well.© 1995 American Institute of Physics.

引用

收藏

页码：754 / 756

页数：3

相关论文

共 24 条

[1] ELECTRONIC-PROPERTIES OF GA(IN)AS-BASED HETEROSTRUCTURES [J].

BASTARD, G ;

FERREIRA, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) :470-480

[2] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[3] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[4] ACHIEVEMENT OF EXCEPTIONALLY HIGH MOBILITIES IN MODULATION-DOPED GA1-XINXAS ON INP USING A STRESS COMPENSATED STRUCTURE [J].

CHIN, A ;

CHANG, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02) :364-366

[5] INTERSUBBAND SCATTERING IN A 2D ELECTRON-GAS [J].

COLERIDGE, PT .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (09) :961-966

[6] HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY [J].

DEBBAR, N ;

RUDRA, A ;

CARLIN, JF ;

ILEGEMS, M .

APPLIED PHYSICS LETTERS, 1994, 65 (02) :228-230

[7] PERSISTENT PHOTOCONDUCTIVITY AND 2-BAND EFFECTS IN GAAS/ALXGA1-XAS HETEROJUNCTIONS [J].

FLETCHER, R ;

ZAREMBA, E ;

DIORIO, M ;

FOXON, CT ;

HARRIS, JJ .

PHYSICAL REVIEW B, 1990, 41 (15) :10649-10666

[8] BURIED-OXIDE RIDGE-WAVE-GUIDE INALAS-INP-INGAASP (LAMBDA-SIMILAR-TO-1.3-MU-M) QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES [J].

KRAMES, MR ;

HOLONYAK, N ;

EPLER, JE ;

SCHWEIZER, HP .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2821-2823

[9] 2-DIMENSIONAL ELECTRON-GAS IN GAAS/AL1-XGAXAS HETEROSTRUCTURES - EFFECTIVE MASS [J].

LO, I ;

MITCHEL, WC ;

PERRIN, RE ;

MESSHAM, RL ;

YEN, MY .

PHYSICAL REVIEW B, 1991, 43 (14) :11787-11790

[10] WANNIER-STARK QUANTIZATION BY INTERNAL FIELD IN THE HGTE/CDTE SUPERLATTICE [J].

LO, I ;

MITCHEL, WC ;

HARRIS, KA ;

YANKA, RW ;

MOHNKERN, LM ;

REISINGER, AR ;

MYERS, TH .

APPLIED PHYSICS LETTERS, 1993, 62 (13) :1533-1535