CLUSTERING OF OXYGEN-ATOMS IN SILICON AT 450-DEGREES-C - A NEW APPROACH TO THERMAL DONOR FORMATION

Clustering of oxygen atoms in silicon at 450-degrees-C has been correlated with a group of infrared vibrational absorption bands observable at room temperature. The bands are related to the formation of thermal donors and show a good correlation with results from different experimental techniques. It is suggested that three categories of thermal donors are developing corresponding to absorption bands at about 975, 988, 1000, 1006, and 1012 cm-1.