LATTICE-PARAMETER CRITERION FOR MISCIBILITY GAPS IN III-V AND II-VI PSEUDOBINARY SOLID-SOLUTIONS

被引：30

作者：

FOSTER, LM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1149/1.2401764

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1662 / 1665

页数：4

共 16 条

[1] CLOUGH RB, 1969, T METALL SOC AIME, V245, P583
[2] DARKEN LS, 1953, PHYSICAL CHEMISTRY M
[3] SOLIDUS BOUNDARY IN GAAS-GAP PSEUDOBINARY PHASE-DIAGRAM
FOSTER, LM
WOODS, JF
SCARDEFIELD, JE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1426 - +
[4] FOSTER LM, 1971, J ELECTROCHEM SOC, V118, P1175, DOI 10.1149/1.2408276
[5] THERMODYNAMIC ANALYSIS OF III-V ALLOY SEMICONDUCTOR PHASE-DIAGRAMS .2. GASB-GAAS SYSTEM
FOSTER, LM
WOODS, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 504 - &
[6] THERMODYNAMIC ANALYSIS OF III-V ALLOY SEMICONDUCTOR PHASE DIAGRAMS .3. SOLIDUS BOUNDARY IN GA1-XALXAS PSEUDOBINARY SYSTEM
FOSTER, LM
SCARDEFIELD, JE
WOODS, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 765 - +
[7] Gratton M. F., 1973, Journal of Electronic Materials, V2, P455, DOI 10.1007/BF02660149
[8] Hildebrand J. H., 1964, SOLUBILITY NONELECTR
[9] Hume-Rothery W., 1936, LONDON, V22, P1013, DOI [10.1080/14786443608561755, DOI 10.1080/14786443608561755]
[10] LEWIS GN, 1961, THERMODYNAMICS, pCH21