EPITAXIAL REORDERING OF ION-IRRADIATED NISI2 LAYERS

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[3] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[4] ISHIWARA H, 1980, P S THIN FILM INTERF, V80, P159

[5] EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J]. THIN SOLID FILMS, 1980, 71 (01) : 117 - 127

[6] LAU SS, 1980, HDB SEMICONDUCTORS, V3, pCH8

[7] ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 225 - 227

[8] TSAUR BY, 1980, UNPUB

[9] METASTABLE PHASES IN LASER-IRRADIATED PT-SI AND PD-SI THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 84 - 86

[1] BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[2] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J]. THIN SOLID FILMS, 1973, 18 (02) : 343 - 363

[3] CHANNELING STUDIES OF RADIATION-DAMAGE IN METAL-SILICIDES [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 23 - 24

[4] ISHIWARA H, 1980, P S THIN FILM INTERF, V80, P159

[5] EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J]. THIN SOLID FILMS, 1980, 71 (01) : 117 - 127

[6] LAU SS, 1980, HDB SEMICONDUCTORS, V3, pCH8

[7] ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 225 - 227

[8] TSAUR BY, 1980, UNPUB

[9] METASTABLE PHASES IN LASER-IRRADIATED PT-SI AND PD-SI THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 84 - 86