THEORY OF N-INVERSION LAYERS IN NARROW GAP SEMICONDUCTORS - THE ROLE OF THE BOUNDARY-CONDITIONS

被引：37

作者：

SOBKOWICZ, P

机构：

[1] Inst. of Phys., Polish Acad. of Sci., Warsaw

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1088/0268-1242/5/2/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical calculation of the subband energy structure of inversion layers in narrow gap semiconductors is presented. The role of boundary conditions imposed on the electron wavefunctions is examined in detail, both at the insulator-semiconductor interface and inside the semiconductor, where the degeneracy of the two-dimensional states with the bulk valence band plays an important part. The method used is briefly compared with previously published calculational models. Self consistently calculated subband energies and spin splittings for narrow gap HgCdTe are presented and compared with the experimental results.

引用

页码：183 / 190

页数：8

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