RAPID ISOTHERMAL FUSION OF PSG FILMS

被引：10

作者：

MERCIER, JS

CALDER, ID

BEERKENS, RP

NAGUIB, HM

机构：

[1] Northern Telecom Electronics Ltd,, Semiconductor Components Group,, Ottawa, Ont, Can, Northern Telecom Electronics Ltd, Semiconductor Components Group, Ottawa, Ont, Can

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 10期

关键词：

D O I：

10.1149/1.2113594

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

GLASS

引用

页码：2432 / 2435

页数：4

共 19 条

[1] SCANNING ELECTRON-MICROSCOPE INVESTIGATION OF GLASS FLOW IN MOS INTEGRATED-CIRCUIT FABRICATION [J].

ARMSTRONG, WE ;

TOLLIVER, DL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (02) :307-310

[2]

BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, pCH4

[3] DEPOSITION AND REFLOW OF PHOSPHOSILICATE GLASS [J].

BOWLING, RA ;

LARRABEE, GB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :141-145

[4]

CURRENT M, 1983, SOLID STATE TECHNOL, V26, P197

[5]

DOWNEY DF, 1982, SOLID STATE TECHNOL, V25, P87

[6]

Fair R. B., 1983, International Electron Devices Meeting 1983. Technical Digest, P658

[7]

FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[8] DIFFUSIVITY SUMMARY OF B, GA, P, AS, AND SB IN SIO2 [J].

GHEZZO, M ;

BROWN, DM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :146-148

[9]

GHOSHTAGORE RN, 1975, THIN SOLID FILMS, V25, P501, DOI 10.1016/0040-6090(75)90068-1

[10]

HARA T, 1984, JPN J APPL PHYS, V23, pL453

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