GAALAS/GAAS P-N-P HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOCVD

[1] THE CHARACTERIZATION OF DISTORTIONS IN HETERO-EPITAXIAL STRUCTURES BY X-RAY MULTIPLE DIFFRACTION [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 375 - 381

[2] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287

[3] ZINC DOPING OF MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 44 - 47

[4] GLEW RW, 1982, J PHYS-PARIS, V43, P281, DOI 10.1051/jphyscol:1982533

[5] LATERAL PNP GAAS BIPOLAR-TRANSISTOR WITH MINIMIZED SUBSTRATE CURRENT [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 315 - 317

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[7] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 562 - 564

[8] DOUBLE DIFFUSED PNP GAAS TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 827 - &

[9] STOBBS WM, COMMUNICATION

[10] SU LM, 1982, I PHYS C SER, V63, P551

[1] THE CHARACTERIZATION OF DISTORTIONS IN HETERO-EPITAXIAL STRUCTURES BY X-RAY MULTIPLE DIFFRACTION [J]. JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR): : 375 - 381

[2] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1281 - 1287

[3] ZINC DOPING OF MOCVD GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 44 - 47

[4] GLEW RW, 1982, J PHYS-PARIS, V43, P281, DOI 10.1051/jphyscol:1982533

[5] LATERAL PNP GAAS BIPOLAR-TRANSISTOR WITH MINIMIZED SUBSTRATE CURRENT [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 315 - 317

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[7] AL0.5GA0.5AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1979, 34 (09) : 562 - 564

[8] DOUBLE DIFFUSED PNP GAAS TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 827 - &

[9] STOBBS WM, COMMUNICATION

[10] SU LM, 1982, I PHYS C SER, V63, P551