LOW DISSIPATION CURRENT GAAS PRESCALER IC

被引：5

作者：

HASEGAWA, K

UENOYAMA, T

NISHII, K

ONUMA, T

机构：

[1] Matsushita Electric Industrial Co, Moriguchi, Jpn, Matsushita Electric Industrial Co, Moriguchi, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 05期

关键词：

D O I：

10.1049/el:19860172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：251 / 252

页数：2

共 7 条

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[2] HIGH-SPEED GAAS SCFL MONOLITHIC INTEGRATED DECISION CIRCUIT FOR GBIT/S OPTICAL REPEATERS [J].

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[3] HIGH-TRANSCONDUCTANCE ENHANCEMENT-MODE GAAS-MESFET FABRICATION TECHNOLOGY [J].

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TSUJII, H ;

NISHII, K ;

YAGITA, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) :409-411

[4]

SHIMIZU S, 1984, ISSCC84 TECHN PAP, P52

[5]

Suzuki H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P682

[6] 1-GHZ 5-MA 128/129 GAAS PRESCALER IC [J].

TAKADA, T ;

SAITO, S ;

KATO, N ;

IDDA, M .

ELECTRONICS LETTERS, 1985, 21 (17) :731-733

[7] HIGH-SPEED GAAS SCFL DIVIDER [J].

TAMURA, A ;

SAKASHITA, T ;

UENOYAMA, T ;

NISHII, K ;

TAMBO, T ;

NAGANO, K ;

ONUMA, T .

ELECTRONICS LETTERS, 1985, 21 (14) :605-606

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