REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4

[1] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1599 - 1604

[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN [J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859

[3] HIGH-RATE MASKED ETCHING OF GAAS BY MAGNETRON ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03): : 706 - 713

[4] CONTOLINI RJ, 1988, J ELECTROCHEM SOC, V13, P929

[5] USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2225 - 2226

[6] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[7] DZIOBA S, 1984, ELECTROCHEMICAL SOC, V84, P506

[8] FLAMM DL, 1984, VLSI ELECTRONICS MIC, V8

[9] CHEMICAL DRY ETCHING OF GAAS AND INP BY CL2 USING A NEW ULTRAHIGH-VACUUM DRY-ETCHING MOLECULAR-BEAM-EPITAXY SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 168 - 171

[10] GAGNE C, 1988, SOLID STATE TECHNOL, V5, P183

[1] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) : 1599 - 1604

[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN [J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859

[3] HIGH-RATE MASKED ETCHING OF GAAS BY MAGNETRON ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03): : 706 - 713

[4] CONTOLINI RJ, 1988, J ELECTROCHEM SOC, V13, P929

[5] USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2225 - 2226

[6] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537

[7] DZIOBA S, 1984, ELECTROCHEMICAL SOC, V84, P506

[8] FLAMM DL, 1984, VLSI ELECTRONICS MIC, V8

[9] CHEMICAL DRY ETCHING OF GAAS AND INP BY CL2 USING A NEW ULTRAHIGH-VACUUM DRY-ETCHING MOLECULAR-BEAM-EPITAXY SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 168 - 171

[10] GAGNE C, 1988, SOLID STATE TECHNOL, V5, P183