OBSERVATIONAL OF FOWLER-NORDHEIM TUNNELING AT ATMOSPHERIC-PRESSURE USING AU/TI LATERAL TUNNEL-DIODES

Au/Ti lateral tunnel diodes with interelectrode gaps less than 50 nm have been fabricated on Si3N4 substrates using nanolithographical techniques. The fabricated devices were found to conduct by Fowler-Nordheim tunnelling both in high vacuum and at atmospheric pressure. The electrical characteristics of these devices showed that by using nanometre-size gaps between cathode and anode, vacuum microelectronic devices can be made to operate at ambient pressures much higher than those normally allowed at present.