DEPOSITION MECHANISMS OF SIO2 IN REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION ANALYZED BY SPATIALLY-RESOLVED MASS-SPECTROSCOPY

被引：3

作者：

FUYUKI, T

OKA, T

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Kyoto University, Yoshidahonmachi, Sakyo, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 7B期

关键词：

REMOTE PLASMA; CHEMICAL VAPOR DEPOSITION; SIO2; MASS SPECTROSCOPY;

D O I：

10.1143/JJAP.33.4417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The decomposition of silane (SiH4) with activated neutral oxygen is investigated by spatially resolved quadrupole mass spectroscopy (QMS). SiH4 molecules were found to be decomposed in the vapor phase by collisions with activated neutral oxygen. Generation of hydroxyls (OH, H2O) is discussed in relation to the chemical reactions in the vapor phase and on the substrate surface. The analysis of activation energy in the evolution of hydroxyls from growing surfaces infers that Si-O bonds form on substrate surfaces releasing OH and H2O into the vapor.

引用

页码：4417 / 4420

页数：4

共 6 条

[1]

FUYUKI T, 1992, IEICE T ELECTRON, VE75C, P1013

[2]

FUYUKI T, 1988, P JPN S PLASMA CHEM, V1, P65

[3]

FUYUKI T, 1991, JPN J APPL PHYS, V33, P440

[4] MASS-SPECTROMETRIC STUDIES OF SIO2 DEPOSITION IN AN INDIRECT PLASMA-ENHANCED LPCVD SYSTEM [J].

IYER, R ;

LILE, DL ;

MCCONICA, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) :1430-1434

[5] OPTICAL-EMISSION AND MASS SPECTROSCOPIC STUDIES OF THE GAS-PHASE DURING THE DEPOSITION OF SIO2 AND A-SI-H BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

TSU, DV ;

PARSONS, GN ;

LUCOVSKY, G ;

WATKINS, MW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1115-1123

[6]

UCOVSKY G, 1992, JPN J APPL PHYS, V31, P4387

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