OPTICAL-EMISSION AND MASS SPECTROSCOPIC STUDIES OF THE GAS-PHASE DURING THE DEPOSITION OF SIO2 AND A-SI-H BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：57

作者：

TSU, DV

PARSONS, GN

LUCOVSKY, G

WATKINS, MW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576239

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1115 / 1123

页数：9

共 19 条

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[8] OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD)
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[9] Pearse R. W. B., 1976, IDENTIFICATION MOL S
[10] REMOTE PLASMA ENHANCED CVD DEPOSITION OF SILICON-NITRIDE AND OXIDE FOR GATE INSULATORS IN (INDIUM, GA)AS FET DEVICES
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MANSOUR, AN
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 867 - 872

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