PRECURSORS FOR THE DEPOSITION OF AMORPHOUS-SILICON HYDROGEN ALLOYS BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

PARSONS, GN

TSU, DV

WANG, C

LUCOVSKY, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.576240

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1124 / 1129

页数：6

共 26 条

[1] ACTIVATED CHEMISORPTION - INTERNAL DEGREES OF FREEDOM AND MEASURED ACTIVATION-ENERGIES
BRASS, SG
EHRLICH, G
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (20) : 2532 - 2535
[2] HIGH-PRESSURE HELIUM AFTERGLOW AT ROOM-TEMPERATURE
DELOCHE, R
MONCHICOURT, P
CHERET, M
LAMBERT, F
[J]. PHYSICAL REVIEW A, 1976, 13 (03): : 1140 - 1176
[3] DOMINANT REACTION CHANNELS AND THE MECHANISM OF SILANE DECOMPOSITION IN A H2-SI(S)-SIH4 GLOW-DISCHARGE
ENSSLEN, K
VEPREK, S
[J]. PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (02) : 139 - 153
[4] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[5] ELECTRON KINETICS OF SILANE DISCHARGES
GARSCADDEN, A
DUKE, GL
BAILEY, WF
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1012 - 1014
[6] HIGH-RESOLUTION ABSORPTION AND EMISSION-SPECTROSCOPY OF A SILANE PLASMA IN THE 1800-2300 CM-1 RANGE
KNIGHTS, JC
SCHMITT, JPM
PERRIN, J
GUELACHVILI, G
[J]. JOURNAL OF CHEMICAL PHYSICS, 1982, 76 (07) : 3414 - 3421
[7] DECOMPOSITION KINETICS OF A STATIC DIRECT-CURRENT SILANE GLOW-DISCHARGE
LONGEWAY, PA
ESTES, RD
WEAKLIEM, HA
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (01) : 73 - 77
[8] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
MATSUDA, A
TANAKA, K
[J]. THIN SOLID FILMS, 1982, 92 (1-2) : 171 - 187
[9] MOORE JW, 1981, KINETICS MECHANISM
[10] PROPERTIES OF INTRINSIC AND DOPED A-SI-H DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
PARSONS, GN
TSU, DV
LUCOVSKY, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1912 - 1916

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