NOVEL BISTABLE DEVICE - RESONANT-TUNNELING TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (R-TOPS)

被引：9

作者：

SAKATA, H

UTAKA, K

MATSUSHIMA, Y

机构：

[1] KDD R&D Laboratories, Kamifukuoka-shi, Saifama 356

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 20期

关键词：

RESONANT TUNNELING DEVICES; PHOTOTRANSISTORS; OPTICAL BISTABILITY;

D O I：

10.1049/el:19941167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a novel optical bistable device, the resonant-tunnelling triangular-barrier optoelectronic switch (R-TOPS), which consists of a double-barrier resonant-tunnelling diode and a triangular-barrier phototransistor. Clear negative differential resistance and bistability with high contrast and high sensitivity are demonstrated.

引用

页码：1714 / 1716

页数：3

共 4 条

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[2]

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[3] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

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HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334

[4]

KAWAMURA Y, IEEE J QUANTUM ELECT, V28, P308

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