LINEAR DEFECTS IN POST HYDROGENATED AMORPHOUS-SILICON EVIDENCED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY (HREM)

被引：11

作者：

CHENEVASPAULE, A ^{[1
]}

BOURRET, A ^{[1
]}

机构：

[1] CEA,DEPT RECH FONDAMENTALE PHYS,F-38041 GRENOBLE,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90564-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：233 / 236

页数：4

共 7 条

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[3]

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[4]

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[5] THEORETICAL-STUDY OF INTRINSIC SURFACE PHONONS IN HYDROGENATED AMORPHOUS-SILICON [J].

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[6] PROTON MAGNETIC-RESONANCE SPECTRA OF PLASMA-DEPOSITED AMORPHOUS SI-H FILMS [J].

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PHYSICAL REVIEW LETTERS, 1980, 44 (03) :193-196

[7] THE OBSERVATION OF AMORPHOUS MATERIALS AT HIGH-VOLTAGE AND HIGH-RESOLUTION [J].

SMITH, DJ ;

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CATTO, CJD .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 119 (MAY) :19-28

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