RESONANT SCATTERING INDUCED TRANSPORT ANOMALIES IN ZERO-GAP SEMICONDUCTORS

被引：3

作者：

LIU, L

VERIE, C

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92190 MEUDON,FRANCE

[2] NORTHWESTERN UNIV,DEPT PHYS,EVANSTON,IL 60201

来源：

SOLID STATE COMMUNICATIONS | 1976年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1098(76)91687-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：13 / 15

页数：3

共 11 条

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