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REACTIVE ION ETCHING OF TANTALUM PENTOXIDE
被引:16
作者
:
SEKI, S
论文数:
0
引用数:
0
h-index:
0
SEKI, S
UNAGAMI, T
论文数:
0
引用数:
0
h-index:
0
UNAGAMI, T
TSUJIYAMA, B
论文数:
0
引用数:
0
h-index:
0
TSUJIYAMA, B
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1983年
/ 130卷
/ 12期
关键词
:
D O I
:
10.1149/1.2119624
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:2505 / 2506
页数:2
相关论文
共 3 条
[1]
QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY
[J].
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
OHTA, K
;
YAMADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
YAMADA, K
;
SHIMIZU, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
SHIMIZU, K
;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
TARUI, Y
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(03)
:368
-376
[2]
VERY PRECISE SECTIONING METHOD FOR MEASURING CONCENTRATION PROFILES IN ANODIC TANTALUM OXIDE
[J].
PRINGLE, JPS
论文数:
0
引用数:
0
h-index:
0
PRINGLE, JPS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:482
-&
[3]
SEKI S, UNPUB J VAC SCI TECH
←
1
→
共 3 条
[1]
QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY
[J].
OHTA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
OHTA, K
;
YAMADA, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
YAMADA, K
;
SHIMIZU, K
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
SHIMIZU, K
;
TARUI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LABS,SAKURAMURA,IBARAKI,JAPAN
TARUI, Y
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(03)
:368
-376
[2]
VERY PRECISE SECTIONING METHOD FOR MEASURING CONCENTRATION PROFILES IN ANODIC TANTALUM OXIDE
[J].
PRINGLE, JPS
论文数:
0
引用数:
0
h-index:
0
PRINGLE, JPS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1972,
119
(04)
:482
-&
[3]
SEKI S, UNPUB J VAC SCI TECH
←
1
→