DETERMINATION OF THE SI(111) 1X1 STRUCTURE AT HIGH-TEMPERATURE BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION

被引：87

作者：

KOHMOTO, S

ICHIMIYA, A

机构：

来源：

SURFACE SCIENCE | 1989年 / 223卷 / 03期

关键词：

D O I：

10.1016/0039-6028(89)90669-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：400 / 412

页数：13

共 36 条

[1] NEW RECONSTRUCTIONS ON SILICON (111) SURFACES [J].

BECKER, RS ;

GOLOVCHENKO, JA ;

HIGASHI, GS ;

SWARTZENTRUBER, BS .

PHYSICAL REVIEW LETTERS, 1986, 57 (08) :1020-1023

[2] THE SI(111) 7X7 TO 1X1 TRANSITION [J].

BENNETT, PA ;

WEBB, MW .

SURFACE SCIENCE, 1981, 104 (01) :74-104

[3] RELATIVISTIC HARTREE-FOCK X-RAY AND ELECTRON SCATTERING FACTORS [J].

DOYLE, PA ;

TURNER, PS .

ACTA CRYSTALLOGRAPHICA SECTION A-CRYSTAL PHYSICS DIFFRACTION THEORETICAL AND GENERAL CRYSTALLOGRAPHY, 1968, A 24 :390-&

[4] MEASUREMENT OF THE SILICON (111) SURFACE CONTRACTION [J].

DURBIN, SM ;

BERMAN, LE ;

BATTERMAN, BW ;

BLAKELY, JM .

PHYSICAL REVIEW LETTERS, 1986, 56 (03) :236-239

[5] SIMILARITY BETWEEN THE SI(111)-(7 X 7) AND IMPURITY-STABILIZED SI(111)-(1 X 1) SURFACES [J].

EASTMAN, DE ;

HIMPSEL, FJ ;

VANDERVEEN, JF .

SOLID STATE COMMUNICATIONS, 1980, 35 (04) :345-347

[6] OBSERVATION AND STRUCTURAL DETERMINATION OF (SQUARE-ROOT-3 X SQUARE-ROOT-3)R30-DEGREES RECONSTRUCTION OF THE SI(111) SURFACE [J].

FAN, WC ;

IGNATIEV, A ;

HUANG, H ;

TONG, SY .

PHYSICAL REVIEW LETTERS, 1989, 62 (13) :1516-1519

[7] STRUCTURE AND TRANSFORMATION CHARACTERISTICS OF IMPURITY STABILIZED PHASES ON SI(111) SURFACE [J].

FLORIO, JV ;

ROBERTSON, WD .

SURFACE SCIENCE, 1971, 24 (01) :173-+

[8] OBSERVATION OF PHASE-TRANSITIONS ON THE (111) AND (100) SURFACES OF SI NEAR 1000-K WITH HE ATOM DIFFRACTION [J].

HA, JS ;

GREENE, EF .

JOURNAL OF CHEMICAL PHYSICS, 1989, 91 (01) :571-576

[9] RHEED INTENSITY ANALYSIS OF SI(111)7X7 AND 3-SQUARE-ROOT X 3-SQUARE-ROOT-AG SURFACES .1. KINEMATIC DIFFRACTION APPROACH [J].

HORIO, Y ;

ICHIMIYA, A .

SURFACE SCIENCE, 1983, 133 (2-3) :393-400

[10] ANALYTICAL FORMULA OF IMAGINARY CRYSTAL-POTENTIAL FOR FAST ELECTRONS [J].

ICHIMIYA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1579-1580

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