CONDUCTANCE OSCILLATIONS PERIODIC IN THE DENSITY OF A ONE-DIMENSIONAL ELECTRON-GAS

被引：278

作者：

SCOTTTHOMAS, JHF ^{[1
]}

FIELD, SB ^{[1
]}

KASTNER, MA ^{[1
]}

SMITH, HI ^{[1
]}

ANTONIADIS, DA ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.62.583

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：583 / 586

页数：4

相关论文

共 13 条

[1] ALTSHULER BL, 1985, JETP LETT+, V41, P648
[2] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS
FOWLER, AB
HARTSTEIN, A
WEBB, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199
[3] NONMONOTONIC VARIATIONS OF THE CONDUCTANCE WITH ELECTRON-DENSITY IN APPROXIMATELY 70-NM-WIDE INVERSION-LAYERS
KWASNICK, RF
KASTNER, MA
MELNGAILIS, J
LEE, PA
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 224 - 227
[4] ELECTRON-STATES IN NARROW GATE-INDUCED CHANNELS IN SI
LAUX, SE
STERN, F
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 91 - 93
[5] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN METALS
LEE, PA
STONE, AD
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (15) : 1622 - 1625
[6] ELECTRIC-FIELD DEPINNING OF CHARGE-DENSITY WAVES
LEE, PA
RICE, TM
[J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3970 - 3980
[7] LEE PA, 1984, PHYS REV LETT, V53, P2024
[8] PEPPER M, 1982, J PHYS C SOLID STATE, V5, pL617
[9] SI METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH 70-NM SLOTTED GATES FOR STUDY OF QUASI-ONE-DIMENSIONAL QUANTUM TRANSPORT
SCOTTTHOMAS, JHF
KASTNER, MA
ANTONIADIS, DA
SMITH, HI
FIELD, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1841 - 1844
[10] UNIVERSAL CONDUCTANCE FLUCTUATIONS IN SILICON INVERSION-LAYER NANOSTRUCTURES
SKOCPOL, WJ
MANKIEWICH, PM
HOWARD, RE
JACKEL, LD
TENNANT, DM
STONE, AD
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (26) : 2865 - 2868