GROWTH OF EPITAXIAL AG/SI FILMS BY THE PARTIALLY IONIZED BEAM DEPOSITION TECHNIQUE

被引：19

作者：

NASON, TC ^{[1
]}

YOU, L ^{[1
]}

YANG, GR ^{[1
]}

LU, TM ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.347363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The observation of room-temperature epitaxy of vapor-deposited thin Ag films on Si(111) accomplished under conventional vacuum conditions is reported. Epitaxy was also observed at 350-degrees-C. The films were deposited using a partially ionized beam deposition system, and were typically 1500 angstrom thick. Epitaxy was confirmed via pole-figure analysis. Scanning electron microscopy revealed excellent surface flatness even for the room-temperature films. Contrary to previous observations, the growth was found to proceed by the layer mode, even at the elevated temperature. This change in morphology is attributed to the enhanced density of nucleation sites due to the energetic ions.

引用

页码：773 / 777

页数：5

共 25 条

[1] ROOM-TEMPERATURE EPITAXY OF CU ON SI(111) USING PARTIALLY IONIZED BEAM DEPOSITION [J].

BAI, P ;

YANG, GR ;

YOU, L ;

LU, TM ;

KNORR, DB .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (05) :989-997

[2] EPITAXIAL-GROWTH OF AL(111) SI(111) FILMS USING PARTIALLY IONIZED BEAM DEPOSITION [J].

CHOI, CH ;

HARPER, RA ;

YAPSIR, AS ;

LU, TM .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :1992-1994

[3] GROWTH OF AG CRYSTALS ON SI(111) SURFACE OBSERVED BY SEM [J].

GOTOH, Y ;

YANOKURA, E .

JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) :408-414

[4] EFFECT OF SURFACE CONTAMINATION ON THE STRANSKI-KRASTANOV GROWTH MODE OF A AG SI SYSTEM [J].

GOTOH, Y ;

INO, S ;

KOMATSU, H .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :498-504

[5] NUCLEATION, GROWTH AND THE INTERMEDIATE LAYER IN AG/SI(100) AND AG SI(111) [J].

HANBUCKEN, M ;

FUTAMOTO, M ;

VENABLES, JA .

SURFACE SCIENCE, 1984, 147 (2-3) :433-450

[6] EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THE X-RAY MICROSTRUCTURE OF THIN SILVER FILMS [J].

HUANG, TC ;

LIM, G ;

PARMIGIANI, F ;

KAY, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2161-2166

[7]

KERN W, 1970, RCA REV, V31, P187

[8] EXTENDED BULK DEFECTS INDUCED BY LOW-ENERGY IONS DURING PARTIALLY IONIZED BEAM DEPOSITION [J].

LEE, WI ;

WONG, J ;

BORREGO, JM ;

LU, TM .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :2206-2208

[9]

LeGoues F.K., 1987, MATER RES SOC S P, V94, P121

[10] MICROSTRUCTURE OF EPITAXIAL AG/SI(111) AND AG/SI(100) INTERFACES [J].

LEGOUES, FK ;

LIEHR, M ;

RENIER, M ;

KRAKOW, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02) :179-189

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