PARTICLE LOCALIZATION AND PHONON SIDE-BAND IN GAAS/ALXGA1-XAS MULTIPLE QUANTUM-WELLS

被引：54

作者：

BRENER, I

OLSZAKIER, M

COHEN, E

EHRENFREUND, E

RON, A

PFEIFFER, L

机构：

[1] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, DEPT PHYS, IL-32000 HAIFA, ISRAEL

[3] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.46.7927

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use time-resolved spectroscopy of the LO-phonon sidebands to study the in-plane localization of carriers and excitons in undoped GaAs/AlxGa1-xAs multiple quantum wells at low temperatures. We find three distinct populations contributing to the radiative recombination (excluding shallow background impurities): (a) weakly localized excitons, their localization dimension being larger than the exciton Bohr radius, (b) tightly localized excitons, (c) separately localized electrons and holes that decay radiatively on a microsecond time scale.

引用

页码：7927 / 7930

页数：4

共 20 条

[1] BASTARD G, 1988, WAE MECHANICS APPLIE
[2] SHALLOW IMPURITIES IN SEMICONDUCTOR QUANTUM-WELLS
CHANG, YC
[J]. PHYSICA B & C, 1987, 146 (1-2): : 137 - 149
[3] CHRISTEN J, 1990, FESTKOR-ADV SOLID ST, V30, P239
[4] DEVAUD B, 1990, PHYS REV LETT, V65, P2317
[5] ENHANCED RADIATIVE RECOMBINATION OF FREE-EXCITONS IN GAAS QUANTUM-WELLS
DEVEAUD, B
CLEROT, F
ROY, N
SATZKE, K
SERMAGE, B
KATZER, DS
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (17) : 2355 - 2358
[6] EXCITONS, PHONONS, AND INTERFACES IN GAAS/ALAS QUANTUM-WELL STRUCTURES
GAMMON, D
SHANABROOK, BV
KATZER, DS
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (12) : 1547 - 1550
[7] RAPID RADIATIVE DECAY AND ENHANCED OPTICAL NONLINEARITY OF EXCITONS IN A QUANTUM WELL
HANAMURA, E
[J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1228 - 1234
[8] STUDIES OF EXCITON LOCALIZATION IN QUANTUM-WELL STRUCTURES BY NONLINEAR-OPTICAL TECHNIQUES
HEGARTY, J
STURGE, MD
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (07) : 1143 - 1154
[9] A THEORY OF EDGE-EMISSION PHENOMENA IN CDS, ZNS AND ZNO
HOPFIELD, JJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 110 - 119
[10] ISOELECTRONIC DONORS AND ACCEPTORS
HOPFIELD, JJ
THOMAS, DG
LYNCH, RT
[J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

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