HIGH-POWER SINGLE-MODE OPERATION OF LONG CAVITY GAALAS LASERS WITH NONABSORBING MIRROR BURIED TWIN RIDGE SUBSTRATE STRUCTURE

被引:4
作者
NAITO, H
IMAFUJI, O
KUME, M
SHIMIZU, H
KAZUMURA, M
机构
[1] Matsushita Electronics Corporation, Takatsuki, Osaka
关键词
D O I
10.1063/1.107872
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have newly developed a 350-mu-m long cavity GaAlAs laser with nonabsorbing mirror buried twin ridge substrate structure, in order to obtain highly reliable high power single mode operation. It is found that the long cavity stabilizes lateral mode at powers higher than conventional maximum values because the carrier density is reduced to well suppress spatial hole-burning effect. The fundamental spatial mode operation is confirmed up to 210 mW and the maximum output power as high as 380 mW is obtained. The lifetime at 100 and 200 mW at 25-degrees-C are expected to be 170 000 and 24 000 h, respectively, from the aging test results.
引用
收藏
页码:515 / 516
页数:2
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