CHARACTERIZATION OF INDIVIDUAL ELECTRON TRAPS IN AMORPHOUS SI BY TELEGRAPH NOISE SPECTROSCOPY

被引：37

作者：

ROGERS, CT ^{[1
]}

BUHRMAN, RA ^{[1
]}

KROGER, H ^{[1
]}

SMITH, LN ^{[1
]}

机构：

[1] MICROELECTR & COMP TECHNOL CORP,AUSTIN,TX 78727

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1107 / 1109

页数：3

相关论文

共 17 条

[1] ANDERSON PW, 1972, PHILOS MAG, V34, P983
[2] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343
[3] FARMER KR, UNPUB
[4] PROPERTIES OF AMORPHOUS-GERMANIUM TUNNEL BARRIERS
GIBSON, GA
MESERVEY, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1584 - 1596
[5] JOANNOPOULOS JD, 1984, PHYSICS HYDROGENATED, P14
[6] IMPROVED NB-SI-NB SNAP DEVICES
KROGER, H
SMITH, LN
JILLIE, DW
THAXTER, JB
[J]. IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (03) : 783 - 786
[7] SELECTIVE NIOBIUM ANODIZATION PROCESS FOR FABRICATING JOSEPHSON TUNNEL-JUNCTIONS
KROGER, H
SMITH, LN
JILLIE, DW
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 280 - 282
[8] KROGER H, 1985, IEEE T MAGN, V21, P741
[9] CAPACITANCE TRANSIENT ANALYSIS OF CONFIGURATIONALLY BISTABLE DEFECTS IN SEMICONDUCTORS
LEVINSON, M
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2628 - 2633
[10] NOISE IN SEMICONDUCTORS - SPECTRUM OF A 2-PARAMETER RANDOM SIGNAL
MACHLUP, S
[J]. JOURNAL OF APPLIED PHYSICS, 1954, 25 (03) : 341 - 343