CAPACITANCE TRANSIENT ANALYSIS OF CONFIGURATIONALLY BISTABLE DEFECTS IN SEMICONDUCTORS

被引：22

作者：

LEVINSON, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.335892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2628 / 2633

页数：6

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