A BISTABLE DEFECT IN ELECTRON-IRRADIATED BORON-DOPED SILICON

[1] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[2] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (01) : 109 - 111

[3] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263

[4] SPRENGER M, 1984, UNPUB 13TH INT C DEF

[5] EPR OBSERVATION OF ISOLATED INTERSTITIAL CARBON-ATOM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (22) : 1329 - 1332

[6] EPR OF A TRAPPED VACANCY IN BORON-DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2511 - 2518

[7] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 593 - 596

[8] WATKINS GD, 1979, I PHYSICS C SERIES, V46, P16

[1] BENTON JL, 1983, DEFECTS SEMICONDUCTO, V2, P95

[2] CARBON INTERSTITIAL IN ELECTRON-IRRADIATED SILICON [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (01) : 109 - 111

[3] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 258 - 263

[4] SPRENGER M, 1984, UNPUB 13TH INT C DEF

[5] EPR OBSERVATION OF ISOLATED INTERSTITIAL CARBON-ATOM IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (22) : 1329 - 1332

[6] EPR OF A TRAPPED VACANCY IN BORON-DOPED SILICON [J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2511 - 2518

[7] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 593 - 596

[8] WATKINS GD, 1979, I PHYSICS C SERIES, V46, P16