NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[3] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J]. PHYSICS LETTERS A, 1972, A 38 (02) : 135 - &

[4] STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4809 - 4813

[5] BRABANT JC, 1976, RAD EFFECTS SEMICOND, P200

[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[7] KIMERLING LC, 1976, RAD EFFECTS SEMICOND, P221

[8] MUKASHEV BN, UNPUBLISHED

[9] TROXELL JR, UNPUBLISHED

[10] TROXELL JR, 1979, THESIS LEHIGH U

[1] MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (15) : 953 - 955

[2] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959

[3] NEW MECHANISM FOR INTERSTITIAL MIGRATION [J]. PHYSICS LETTERS A, 1972, A 38 (02) : 135 - &

[4] STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) : 4809 - 4813

[5] BRABANT JC, 1976, RAD EFFECTS SEMICOND, P200

[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[7] KIMERLING LC, 1976, RAD EFFECTS SEMICOND, P221

[8] MUKASHEV BN, UNPUBLISHED

[9] TROXELL JR, UNPUBLISHED

[10] TROXELL JR, 1979, THESIS LEHIGH U