NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON

[11] DEFECTS IN IRRADIATED SILICON - EPR AND ELECTRON-NUCLEAR DOUBLE-RESONANCE OF INTERSTITIAL BORON [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5824 - 5839

[12] DEFECTS IN IRRADIATED SILICON - EPR OF TIN-VACANCY PAIR [J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4383 - 4390

[13] WATKINS GD, 1978, DEFECTS RAD EFFECTS, P16

[14] WATKINS GD, 1979, P INT C RAD PHYSICS

[15] WATKINS GD, 1974, LATTICE DEFECTS SEMI, P1

[11] DEFECTS IN IRRADIATED SILICON - EPR AND ELECTRON-NUCLEAR DOUBLE-RESONANCE OF INTERSTITIAL BORON [J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5824 - 5839

[12] DEFECTS IN IRRADIATED SILICON - EPR OF TIN-VACANCY PAIR [J]. PHYSICAL REVIEW B, 1975, 12 (10): : 4383 - 4390

[13] WATKINS GD, 1978, DEFECTS RAD EFFECTS, P16

[14] WATKINS GD, 1979, P INT C RAD PHYSICS

[15] WATKINS GD, 1974, LATTICE DEFECTS SEMI, P1