DEFECTS IN IRRADIATED SILICON - EPR OF TIN-VACANCY PAIR

被引：130

作者：

WATKINS, GD ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.12.4383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4383 / 4390

页数：8

共 33 条

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[3]

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[4]

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[8]

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[9] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J].

ELKIN, EL ;

WATKINS, GD .

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[10]

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