TIN AS A VACANCY TRAP IN SILICON AT ROOM-TEMPERATURE

被引：40

作者：

BRELOT, A ^{[1
]}

机构：

[1] ECOLE NORM SUPER,GRP PHYS SOLIDES,PARIS 5,FRANCE

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1972年 / NS19卷 / 06期

关键词：

D O I：

10.1109/TNS.1972.4326836

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：220 / 223

页数：4

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Brelot A., 1971, Radiation Effects, V9, P65, DOI 10.1080/00337577108242034

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[6]

BRELOT A, TO BE PUBLISHED

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BRELOT A, 1972, INT C DEFECTS SEMICO

[8] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].

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[9] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].

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[10] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

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