TRANSIENT CAPACITANCE STUDIES OF AN ELECTRON TRAP AT EC-ET=0.105EV IN PHOSPHORUS-DOPED SILICON

被引：66

作者：

JELLISON, GE

机构：

[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期

关键词：

D O I：

10.1063/1.331459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5715 / 5719

页数：5

共 14 条

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[2] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
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[3] ELECTRON-IRRADIATION-INDUCED DIVACANCY IN LIGHTLY DOPED SILICON
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[4] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174
[5] KIMERLING LC, 1976, RAD EFFECTS SEMICOND, P221
[6] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022
[8] CAPACITANCE TRANSIENT SPECTROSCOPY
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LANG, DV
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[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448
[9] NEWMAN RC, 1971, RAD EFFECTS SEMICOND, P155
[10] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
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FORBES, L
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TASCH, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

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