DEPLETION-LOAD, P-CHANNEL, BIPOLAR-IGFET TECHNOLOGY

被引:1
作者
MARR, G [1 ]
MOWERY, GL [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA
来源
BELL SYSTEM TECHNICAL JOURNAL | 1975年 / 54卷 / 01期
关键词
D O I
10.1002/j.1538-7305.1975.tb02826.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:69 / 79
页数:11
相关论文
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[2]  
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[4]   HIGH-PERFORMANCE N-CHANNEL MOS LSI USING DEPLETION-TYPE LOAD ELEMENTS [J].
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